An experiment carried out at the Physikalisch-Technische Bundesanstalt (PTB) has realized spin torque switching of a nanomagnet as fast as the fundamental speed limit allows. Using this so-called ballistic switching future non-volatile magnetic memories could operate as fast as the fastest non-volatile memories. The experiments are described in the next issue of Physical Review Letters 22 August, 2008. Fast memory chips such as DRAMs and SRAMs (Dynamic and Static Random Access Memory).