Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it is sampling the industry's smallest two gigabit(Gb) DDR3 devices. By using 50 nanometer(nm) class circuit technology, productivity of the new devices is 60 percent higher than DDR2 devices of an equivalent density. The new 2Gb DDR3-based modules, which enable use of up to 16 gigabyte(GB) RIMMs (registered in-line memory modules), will consume over 40 percent of the power of 1Gb DDR3 memory. (source: samsung.com)
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