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The Design Of Future Memory Storage Devices Thursday, October 09, 2008 - Anuradha Menon Home >> Headlines >> Storage   
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A research team from A*STAR’s Data Storage Institute (DSI) invented a new phase change material that has the potential to change the design of future memory storage devices. Phase change materials are substances which are capable of changing their structure between amorphous and crystalline at high speed. Currently, these materials are being used to make Phase change memory (PCM), the most promising alternative to replace FLASH memory in future. (source: a-star.edu.sg)
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