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The Design Of Future Memory Storage Devices
Thursday, October 09, 2008 - Anuradha Menon
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A research team from A*STAR’s Data Storage Institute (DSI) invented a new phase change material that has the potential to change the design of future memory storage devices. Phase change materials are substances which are capable of changing their structure between amorphous and crystalline at high speed. Currently, these materials are being used to make Phase change memory (PCM), the most promising alternative to replace FLASH memory in future.    (source: a-star.edu.sg)


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Comments & Replies (1)
cybook   (09/07/09 - 2:47 - by imarn j)
i didn't like this web page.there is nothing in particular

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